A collaborated team led by researchers from the Hefei Institutes of Physical Science of the Chinese Academy of Sciences have successfully developed advanced semiconductor-based radiation detectors, significantly improving their performance for use in extreme environments.
The achievements have been published in IEEE Electron Device Letters and Nuclear Instruments and Methods in Physics Research A.
Radiation detectors serve as the "eyes" for humans to observe and study nuclear radiation and microscopic particles. However, traditional detectors often suffer from low sensitivity and poor adaptability to extreme conditions, limiting their use in high-temperature and high-radiation environments. In contrast, semiconductor-based detectors made from wide-bandgap and ultra-wide-bandgap materials offer advantages like higher temperature resistance, better radiation tolerance, and easier integration, making them a promising direction for advancing radiation detection technology.
In this study, the team focused on optimizing the design, fabrication process, and testing methods of semiconductor-based radiation detectors to overcome the limitations of current technologies.
One of the team's major achievements was the development of large-area detectors made from a combination of p-NiO and β-Ga₂O₃ materials. These materials are known for their low leakage current and enhanced sensitivity. When coupled with specialized neutron detection materials, the team achieved a thermal neutron detector made from Ga₂O₃ that reached nearly 1% efficiency in neutron detection—marking the first successful experimental test of this technology.
In another project, the researchers created a highly sensitive detector using 4H-SiC, a material capable of withstanding extreme conditions. This detector operates with ultra-low doping levels and thick epitaxial layers, allowing it to measure high-energy particles like alpha particles with excellent accuracy. It also demonstrated the ability to maintain stable operation at temperatures as high as 80°C for extended periods, which is crucial for studying superheavy elements in demanding environments.
To further improve the performance of their detectors, the researchers developed a specialized annealing process to enhance the interface between the SiC material and its coating. This innovation led to an impressive improvement in energy resolution, allowing the detectors to achieve better than 0.5% resolution when detecting alpha particles.
Additionally, the team developed a new type of thermal neutron detector that uses boron-based materials for improved neutron capture efficiency. This detector is capable of distinguishing between two key types of reactions involving thermal neutrons, representing another milestone in neutron detection technology.
These advancements mark significant progress in the development of radiation detectors that can operate effectively in extreme environments.
The optical microscope image and structural schematic diagram of the Ga2O3 detector. (Image by HAN Jingyun)
(a) Energy spectrum obtained with a 227Ac source and(b) linear response by 4H-SiC SBD devices. (Image by HAN Jingyun)
Pulse height spectrum obtained by a 4H-SiC detector with NO annealing aftertreatment progress technique under irradiation of a 239Pu-241Am hybrid source. (Image by HAN Jingyun)
Demonstration of β-Ga2O3-Based Thermal Neutron Detector
A novel 4H–SiC thermal neutron detector based on a metal-oxide-semiconductor structure
Effect of NO annealing on radiation detection performance of Ni/SiO2/4H-SiC MOS capacitors
High performance 4H–SiC detectors for superheavy elements study
